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FDI040N06 N-Channel PowerTrench(R) MOSFET
June 2009
FDI040N06
N-Channel PowerTrench(R) MOSFET
60V, 168A, 4.0m Features
* RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant
tm
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC to DC convertors / Synchronous Rectification
D
GDS
I2-PAK FDI Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage -Continuous (TC = 25oC, Silicion Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 100oC, Silicion Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 60 20 168* 118* 120 672 872 7.0 231 1.54 -55 to +175 300 A mJ V/ns W W/oC
o
Units V V A
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
oC
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.65 62.5 Units
o
C/W
(c)2009 Fairchild Semiconductor Corporation FDI040N06 Rev. A
1
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDI038N06 Device FDI038N06 Package TO-262 Reel Size Tube Tape Width Quantity 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC= 25oC ID = 250A, Referenced to VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 25oC 60 0.04 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A
(Note 4)
2.5 -
3.5 3.2 169
4.5 4.0 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V
(Note 4, 5)
-
6190 900 385 102 32 32
8235 1195 580 133 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
30 40 55 24
70 90 120 58
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s
(Note 4)
-
41 47
168 672 1.3 -
A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25 C C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDI040N06 Rev. A
2
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
1000
*Notes: 1. VDS = 10V 2. 250s Pulse Test
100
ID,Drain Current[A]
ID,Drain Current[A]
100
175 C
o
10
25 C
o
10
-55 C
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
0.1 0.01
0.1 1 VDS,Drain-Source Voltage[V]
6
1 2 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
4.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1000
RDS(ON) [m], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
3.5
VGS = 10V
100
175 C
o
25 C
o
3.0
VGS = 20V
10
*Notes: 1. VGS = 0V
2.5 0 60
*Note: TC = 25 C
o
120 180 240 ID, Drain Current [A]
300
360
1 0.2
2. 250s Pulse Test
0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
10000
Ciss
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 12V VDS = 30V VDS = 48V
8
Capacitances [pF]
6
1000
Coss *Note: 1. VGS = 0V 2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
4
Crss
2
*Note: ID = 75A
100 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
20
40 60 80 100 Qg, Total Gate Charge [nC]
120
FDI040N06 Rev. A
3
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.4 RDS(on), [Normalized] Drain-Source On-Resistance
2.0
1.1
1.6
1.0
1.2
0.9
*Notes: 1. VGS = 0V 2. ID = 10mA
0.8
*Notes: 1. VGS = 10V 2. ID = 75A
0.8 -80
-40
0 40 80 120 160 o TJ, Junction Temperature [ C]
200
0.4 -75
-25 25 75 125 175 o TJ, Junction Temperature [ C]
225
Figure 9. Maximum Safe Operating Area
1000
100s
Figure 10. Maximum Drain Current vs. Case Temperature
180
ID, Drain Current [A]
144
1ms
ID, Drain Current [A]
100
108
Limited by package
10
Operation in This Area is Limited by R DS(on)
10ms 100ms 1s
o
72
1
*Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
36
0.1 0.1
1 10 VDS, Drain-Source Voltage [V]
100
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [Z JC]
0.5 0.2 0.1 0.05 0.02
0.1
PDM t1 t2
o
0.01
0.01 Single pulse
*Notes:
1. ZJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.001 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDI040N06 Rev. A
4
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDI040N06 Rev. A
5
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as D U T
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d
VGS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDI040N06 Rev. A
6
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FDI040N06 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
I2-PAK
9.90 0.20 (0.40)
4.50 0.20
+0.10
1.30 -0.05
1.20 0.20
9.20 0.20 MAX 3.00
(1.46)
13.08 0.20
(0.94)
1.27 0.10
1.47 0.10 0.80 0.10
10.08 0.20
MAX13.40
(4 ) 5
2.54 TYP
2.54 TYP
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDI040N06 Rev. A
7
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM*
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Rev. I41
(c) 2008 Fairchild Semiconductor Corporation
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